| Part Number | SSC8121GN1 |
| Manufacturer | AFSEMI |
| Title | P-Channel Enhancement Mode MOSFET |
| Description | This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device pa... |
| Features |
VDS VGS RDSon TYP
ID
150mR@-4V5
-20V ±8V 190mR@-2V5 -1.0A
255mR@-1V8
⚫ General Description This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particular... |
| Datasheet |
 SSC8121GN1 Datasheet
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