| Part Number | SSC8120GS8 |
| Manufacturer | AFSEMI |
| Title | N-Channel Enhancement Mode MOSFET |
| Description | This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly s... |
| Features |
VDS VGS RDSon TYP ID ESD 310mR@4V5 20V ±12V 490mR@2V5 0.8A 1.2K 850mR@1V8 General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particul... |
| Datasheet |
 SSC8120GS8 Datasheet 252.20KB |
