| Part Number | SSC8120GS6 |
| Manufacturer | AFSEMI |
| Title | N-Channel Enhancement Mode MOSFET |
| Description | This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly s... |
| Features |
VDS 20V
VGS ±12V
RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8
ID 1.2A
ESD 1.2K
General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly sui... |
| Datasheet |
 SSC8120GS6 Datasheet
|
