Part Number | PED30H10G |
Manufacturer | semi one |
Title | N-Channel Enhancement Mode Power MOSFET |
Description | The PED30H10G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of ap... |
Features |
● VDS =30V,ID =100A RDS(ON) <5.5mΩ @ VGS=10V (Typ:4mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● ... |
Datasheet | PED30H10G Datasheet 848.26KB |