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PE80H11

semi one
Part Number PE80H11
Manufacturer semi one
Title N-Channel Enhancement Mode Power MOSFET
Description The PE80H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appl...
Features
● VDS =80V,ID =110A RDS(ON) <8mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special proces...

Datasheet PDF File PE80H11 Datasheet

PE80H11   PE80H11   PE80H11  




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