| Part Number | PE20N6 |
| Manufacturer | semi one |
| Title | N-Channel Enhancement Mode Power MOSFET |
| Description | The PE20N6 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of appli... |
| Features |
● VDS =60V,ID =20A RDS(ON) <45mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special proces... |
| Datasheet |
 PE20N6 Datasheet
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