| Part Number | GTVA262701FA |
| Manufacturer | Wolfspeed |
| Title | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| Description | The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications... |
| Features |
input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
GTVA262701FA Package H-87265J-2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz....
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| Datasheet |
 GTVA262701FA Datasheet
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