| Part Number | GTVA261701FA |
| Manufacturer | Wolfspeed |
| Title | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| Description | The GTVA261701FA is a 170-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier appli... |
| Features |
input matching, high efficiency, and a thermally-enhanced package with earless flange.
Package Types: H-37265J-2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz 3GPP WCDMA signal,
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| Datasheet |
 GTVA261701FA Datasheet
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