| Part Number | GTRA362002FC |
| Manufacturer | Wolfspeed |
| Title | Thermally-Enhanced High Power RF GaN on SiC HEMT |
| Description | The GTRA362002FC is a 200-watt (P3dB) GaN on SiC high electron mobility transistor (HEMT) designed for use in multi-standard cellular power amplif... |
| Features |
input matching, high efficiency, and a thermally-enhanced package with earless flange.
GTRA362002FC Package H-37248C-4
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 110 mA, VGS(PEAK) = -5.5 V, ...
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| Datasheet |
 GTRA362002FC Datasheet
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