| Part Number | JDH3D01FV |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Diode Silicon Epitaxial Schottky Barrier Type |
| Description | JDH3D01FV TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01FV ○ For wave detection ¾ Small package 0.22±0.05 1.2±0.05 0.32±0.05 3 0.1... |
| Features |
rt and estimated failure rate, etc).
VESM
JEDEC JEITA TOSHIBA
0.5±0.05
V
― ― 1-2S1C
Weight:0.0015g(typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic Forward voltage Forward current Reverse current Capacitance Symbol VF IF IR IF = 2 m...
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| Datasheet |
 JDH3D01FV Datasheet
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