| Part Number | GT8G132 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel IGBT |
| Description | www..com GT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G132 Strobe Flash Applications Unit: mm • • • • ... |
| Features |
dt should be lower than 400 V/µs.
1
2002-05-17
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GT8G132
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off volta...
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| Datasheet |
 GT8G132 Datasheet
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