| Part Number | GT40M101 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | SILICON N-CHANNEL IGBT |
| Description | GT40M101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT40M101 HIGH POWER SWITCHING APPLICATIONS Unit: mm l High Input Impe... |
| Features |
0 VCE = 900V, VGE = 0 IC = 40mA, VCE = 5V IC = 40A, VGE = 15V VCE = 30V, VGE = 0, f = 1MHz
―
MIN TYP. MAX UNIT
― ― ±500 nA
― ― 1.0 mA
3.0 ― 6.0 V
― 2.1 3.4 V
― 2100 ―
pF
― 0.30 ―
― 0.40 ― µs
― 0.25 0.40
― 0.60 ―
― ― 1.39 °C / W
1 2001-06...
|
| Datasheet |
 GT40M101 Datasheet 225.97KB |
