| Part Number | GT20J101 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Title | Silicon N-Channel IGBT |
| Description | GT20J101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101 High Power Switching Applications Unit: mm • • •... |
| Features |
= 0 VCE = 600 V, VGE = 0 IC = 2 mA, VCE = 5 V IC = 20 A, VGE = 15 V VCE = 20 V, VGE = 0, f = 1 MHz Inductive Load VCC = 300 V, IC = 20 A VGG = ±15 V, RG = 56 Ω (Note1) Min 5.0 Typ. 2.1 1450 0.12 0.40 0.15 0.50 Max ±500 1.0 8.0 2.7 U...
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| Datasheet |
 GT20J101 Datasheet 259.67KB |
