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GT10Q301

Toshiba Semiconductor
Part Number GT10Q301
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Title Silicon N-Channel IGBT
Description GT10Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q301 High Power Switching Applications Motor Control Applications U...
Features time Turn-on time Switching time Fall time Turn-off time Peak forward voltage Reverse recovery time Thermal resistance (IGBT) Thermal resistance (diode) Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) Rth (j-c) IF = 10 A, VG...

Datasheet PDF File GT10Q301 Datasheet 168.53KB

GT10Q301   GT10Q301   GT10Q301  




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