| Part Number | MG25Q6ES42 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon N Channel IGBT GTR Module |
| Description | TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Featu... |
| Features |
• 6 IGBTs are built into 1 package • High speed: • Low saturation voltage: • Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat) = 4.0V (Max.) • The electrodes are isolated from case Maximum Ratings (Ta = 25°C) CHARACTERISTICS Coll... |
| Datasheet |
 MG25Q6ES42 Datasheet
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