| Part Number | MG1200V1US51 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT |
| Description | MG1200V1US51 TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT MG1200V1US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS FEATURES l High... |
| Features |
l High Input Impedance l Enhancement Mode l Electrodes are isolated from case.
EQUIVALENT CIRCUIT
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTICS Collector−Emitter Voltage Gate−Emitter Voltage Collector Current DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF ...
|
| Datasheet |
 MG1200V1US51 Datasheet
|
