| Part Number | 30J101 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | Silicon N-Channel IGBT |
| Description | Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications GT30J101 Unit: mmç • T... |
| Features |
S
VCE = 600 V, VGE = 0
VGE (OFF) IC = 3 mA, VCE = 5 V
5.0
VCE (sat) IC = 30 A, VGE = 15 V
Cies
VCE = 20 V, VGE = 0, f = 1 MHz
tr
Inductive Load
ton
VCC = 300 V, IC = 30 A
tf
VGG = ±15 V, RG = 43 Ω
toff
(Note1)
Rth (...
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| Datasheet |
 30J101 Datasheet
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