| Part Number | 2SA816 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | SILICON PNP EPITAXIAL TYPE TRANSISTOR |
| Description | : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS FEATURES • High Breakdown Vo... |
| Features |
• High Breakdown Voltage : . Complementary to 2SC1626, V CEO =-80V 10.3 MAX. Unit in mm 03.6 ±0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage 'CEO Emitter-Base Voltage EBO Collect... |
| Datasheet |
 2SA816 Datasheet
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