| Part Number | 3VD182600YL |
| Manufacturer | Silan Microelectronics |
| Title | HIGH VOLTAGE MOSFET CHIPS |
| Description | Ø 3VD182600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Ø Ø Ø ... |
| Features |
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-body Leakage Zero Gate Voltage Drain Current Drain-Source On-Resistance Source-Drain Diode Forward on Voltage Symbol V(BR)DSS Vth(GS) lGSS IDSS RDS(on) VFSD Test conditions ID=250uA ID=250uA...
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| Datasheet |
 3VD182600YL Datasheet
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