Part Number | CFY25 |
Manufacturer | Siemens Semiconductor Group |
Title | GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
Description | GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic... |
Features |
VDS = 3 V, VGS = 0 Pinch-off voltage ID = 1 mA, VDS = 3 V Gate leakage current ID = 15 mA, VDS = 3 V Transconductance ID = 15 mA, VDS = 3 V Noise figure IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Associated gain IDS = 15 mA, VDS...
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Datasheet | CFY25 Datasheet |