| Part Number | BUZ358 |
| Manufacturer | Siemens Semiconductor Group |
| Title | Power Transistor |
| Description | BUZ 358 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 358 VDS 1000 V ID 4.5 ... |
| Features |
ol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
1000 3 10 10 2.3 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 ...
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| Datasheet |
 BUZ358 Datasheet
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