| Part Number | BUZ307 |
| Manufacturer | Siemens Semiconductor Group |
| Title | Power Transistor |
| Description | BUZ 307 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 307 VDS 800 V ID 3A R... |
| Features |
tatic Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
800 3 0.1 10 10 2.7 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µ...
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| Datasheet |
 BUZ307 Datasheet
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