| Part Number | BSM150GB170DN2E3166 |
| Manufacturer | Siemens Semiconductor Group |
| Title | IGBT |
| Description | BSM150GB170DN2 E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with ... |
| Features |
1
Aug-01-1996
BSM150GB170DN2 E3166
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.8 5.5 3.4 4.6 1 4 6.2 3.9 5.3
V
VGE = ...
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| Datasheet |
 BSM150GB170DN2E3166 Datasheet
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