| Part Number | BSM150GB120DN2E3166 |
| Manufacturer | Siemens Semiconductor Group |
| Title | IGBT |
| Description | BSM150GB120DN2E3166 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Enlarged diode area • Package with i... |
| Features |
0GB120DN2E3166
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 2 10 6.5 3 3.7
V
VGE = VCE, IC = 6 mA
Collector...
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| Datasheet |
 BSM150GB120DN2E3166 Datasheet
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