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K9PFGD8U7M-B Samsung FLASH MEMORY

Description Enterprise Advance FLASH MEMORY Offered in 4Gx8bit, the K9GBGD8X0M is a 32G-bit NAND Flash Memory with spare 2,076M-bit. The device is offered in 3.3V Vcc & VccQ. (3.3V & 1.8V) and also uses the toggle mode interface to achieve a high data transfer rate. Its NAND cell provides the most cost-effective solution for the solid state application market. A program operation can be performed in typica...
Features
• Voltage Supply : - Core : 2.7V ~ 3.6V - I/O : 2.7V ~ 3.6V / 1.7V ~ 1.95V
• Organization - Memory Cell Array : (4G + 259.5M) x 8bit - Data Register : (8K + 512) x 8bit
• Automatic Program and Erase - Page Program : (8K + 512)Byte - Block Erase : (1M + 64K)Byte
• Page Read Operation - Page Size : (8K + 512)Byte - Random Read : 80µs(Typ.) , 100µs(Ma...

Datasheet PDF File K9PFGD8U7M-B Datasheet - 1.10MB

K9PFGD8U7M-B  






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