| Part Number | K8Q2815UQB |
| Manufacturer | Samsung |
| Title | FLASH MEMORY |
| Description | • Read While Program/Erase Operation • Multiple Bank architectures (8 banks) Bank 0 : 8Mbit (4Kw x 8 and 32Kw x 15) Bank 1 :24Mbit (32Kw x 48) Ba... |
| Features |
• Single Voltage, 2.7V to 3.6V for Read and Write operations • Endurance : 100,000 Program/Erase Cycles Minimum • Organization • Data Retention : 10 years 8M x16 bit (Word mode Only) • Vccq options at 1.8V and 3V I/O • Fast Read Access Time : ... |
| Datasheet |
 K8Q2815UQB Datasheet 659.48KB |
