logo

K8Q2815UQB

Samsung
Part Number K8Q2815UQB
Manufacturer Samsung
Title FLASH MEMORY
Description • Read While Program/Erase Operation • Multiple Bank architectures (8 banks) Bank 0 : 8Mbit (4Kw x 8 and 32Kw x 15) Bank 1 :24Mbit (32Kw x 48) Ba...
Features
• Single Voltage, 2.7V to 3.6V for Read and Write operations
• Endurance : 100,000 Program/Erase Cycles Minimum
• Organization
• Data Retention : 10 years 8M x16 bit (Word mode Only)
• Vccq options at 1.8V and 3V I/O
• Fast Read Access Time : ...

Datasheet PDF File K8Q2815UQB Datasheet 659.48KB

K8Q2815UQB   K8Q2815UQB   K8Q2815UQB  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map