| Part Number | STPSC806 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | Schottky Barrier 600 V power Schottky silicon carbide diode |
| Description | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material al... |
| Features |
■ ■ ■ No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function A K Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silic... |
| Datasheet |
 STPSC806 Datasheet
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