| Part Number | STPSC12H065 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | 650V power Schottky silicon carbide diode |
| Description | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material a... |
| Features |
• No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky dio... |
| Datasheet |
 STPSC12H065 Datasheet
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