| Part Number | STPSC10H065G2 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | high surge silicon carbide power Schottky diode |
| Description | This 10 A, 650 V SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band g... |
| Features |
• No or negligible reverse recovery • Switching behavior independent of temperature • High forward surge capability • Operating Tj from -40 °C to 175 °C • Power efficient product • D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. • ECOPAC... |
| Datasheet |
 STPSC10H065G2 Datasheet
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