| Part Number | SCTWA60N12G2-4AG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | Automotive-grade silicon carbide Power MOSFET |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device fe... |
| Features |
Order code SCTWA60N12G2-4AG
VDS 1200 V
RDS(on) max. 58 mΩ
ID 52 A
HiP247-4
2 34 1
Drain(1, TAB)
• AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction t... |
| Datasheet |
 SCTWA60N12G2-4AG Datasheet
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