| Part Number | SCTW40N120G2VAG |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Title | Automotive-grade silicon carbide Power MOSFET |
| Description | This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device fe... |
| Features |
Order code SCTW40N120G2VAG
VDS 1200 V
RDS(on) max. 105 mΩ
ID 33 A
HiP247
3 2 1
• AEC-Q101 qualified • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance • Very high operating junction temperature capabil... |
| Datasheet |
 SCTW40N120G2VAG Datasheet
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