Part Number | H5N2508DL |
Manufacturer | Renesas (https://www.renesas.com/) Technology |
Title | Silicon N Channel MOS FET High Speed Power Switching |
Description | H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005 Features... |
Features |
www.DataSheet4U.com • Low • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) • High speed switching: tf = 11 ns typ (at VGS = 10 V, VDD = 125 V, ID = 3.5 A) • Low gate charge: Qg = 13 nC typ (at VDD = 200 ... |
Datasheet | H5N2508DL Datasheet |