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RJP30H2A

Renesas
Part Number RJP30H2A
Manufacturer Renesas (https://www.renesas.com/)
Title Silicon N-Channel IGBT
Description Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features...
Features
 Trench gate and thin wafer technology (G6H-II series)
 Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ
 High speed switching: tf = 100 ns typ, tf = 180 ns typ
 Low leak current: ICES = 1 A max Outline RENESAS Package code: P...

Datasheet PDF File RJP30H2A Datasheet 226.18KB

RJP30H2A   RJP30H2A   RJP30H2A  




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