| Part Number | RJP30H2A |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Title | Silicon N-Channel IGBT |
| Description | Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2.00 Jun 15, 2011 Features... |
| Features |
Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ High speed switching: tf = 100 ns typ, tf = 180 ns typ Low leak current: ICES = 1 A max Outline RENESAS Package code: P... |
| Datasheet |
 RJP30H2A Datasheet 226.18KB |
