| Part Number | RJP30H1DPD |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Title | N-Channel IGBT |
| Description | of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and ... |
| Features |
Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 1... |
| Datasheet |
 RJP30H1DPD Datasheet 212.44KB |
