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RJP30H1DPD

Renesas
Part Number RJP30H1DPD
Manufacturer Renesas (https://www.renesas.com/)
Title N-Channel IGBT
Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and ...
Features



 Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. R07DS0465EJ0200 Rev.2.00 Jun 1...

Datasheet PDF File RJP30H1DPD Datasheet 212.44KB

RJP30H1DPD   RJP30H1DPD   RJP30H1DPD  




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