| Part Number | RJP30H1 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Title | N-Channel IGBT |
| Description | RJP30H1DPD Silicon N Channel IGBT High speed power switching Features Trench gate and thin wafer technology (G6H-II series) High speed switch... |
| Features |
Trench gate and thin wafer technology (G6H-II series) High speed switching: tr = 80 ns typ., tf = 150 ns typ. Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ. Low leak current: ICES = 1 A max. Outline RENESAS Package code:... |
| Datasheet |
 RJP30H1 Datasheet 212.44KB |
