logo

RJP30H1

Renesas
Part Number RJP30H1
Manufacturer Renesas (https://www.renesas.com/)
Title N-Channel IGBT
Description RJP30H1DPD Silicon N Channel IGBT High speed power switching Features  Trench gate and thin wafer technology (G6H-II series)  High speed switch...
Features
 Trench gate and thin wafer technology (G6H-II series)
 High speed switching: tr = 80 ns typ., tf = 150 ns typ.
 Low collector to emitter saturation voltage: VCE(sat) = 1.5 V typ.
 Low leak current: ICES = 1 A max. Outline RENESAS Package code:...

Datasheet PDF File RJP30H1 Datasheet 212.44KB

RJP30H1   RJP30H1   RJP30H1  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map