| Part Number | RJP30E2 |
| Manufacturer | Renesas (https://www.renesas.com/) |
| Title | N-Channel Power MOSFET |
| Description | RJP30E2DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low collector to emitter saturati... |
| Features |
• Trench gate technology (G5H series) • Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ • High speed switching tf = 150 ns typ • Low leak current ICES = 1 μA max • Isolated package TO-220FL Outline RENESAS Package code: PRSS0003AF-A)... |
| Datasheet |
 RJP30E2 Datasheet 213.25KB |
