logo

RJP1CS07DWT

Renesas
Part Number RJP1CS07DWT
Manufacturer Renesas (https://www.renesas.com/)
Title IGBT
Description of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and ...
Features
 Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 150 A, VGE = 15 V, Ta = 25C)
 High speed switching
 Short circuit withstands time (10 s min.) R07DS0830EJ0003 Rev.0.03 Jul 05, 2012 Outline Die: RJP1CS07DWT-80 2 C Wa...

Datasheet PDF File RJP1CS07DWT Datasheet 129.46KB

RJP1CS07DWT   RJP1CS07DWT   RJP1CS07DWT  




logo
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Site map