| Part Number | LN69 |
| Manufacturer | Panasonic Semiconductor |
| Title | GaAs Infrared Light Emitting Diode |
| Description | Infrared Light Emitting Diodes LN69 GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.0 max. 2-0.8 max. 2-0.5±0.1 0.5±0.1 2 (1.5) 1 2.5... |
| Features |
High-power output, high-efficiency : Ie = 3.5 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors : λP = 940 nm (typ.) Good radiant power output linearity with respect to input current Long lifetime, high reliability ø3 plastic pack...
|
| Datasheet |
 LN69 Datasheet
|
