| Part Number | LN66L |
| Manufacturer | Panasonic Semiconductor |
| Title | GaAs Infrared Light Emitting Diode |
| Description | Infrared Light Emitting Diodes LN66L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max. 2-0.6±0.15 2.54 For optical contr... |
| Features |
High-power output, high-efficiency :PO = 8 mW (typ.) Emitted light spectrum suited for silicon photodetectors Wide directivity : θ = 25 deg. (typ.) Transparent epoxy resin package Long lead-wire type
26.3±1.0 24.3±1.0 5.25±0.3 1.5 1.0 7.65±0.2
ø5.0±...
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| Datasheet |
 LN66L Datasheet
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