| Part Number | LN55 |
| Manufacturer | Panasonic Semiconductor |
| Title | GaAs Infrared Light Emitting Diode |
| Description | Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-ef... |
| Features |
High-power output, high-efficiency : PO = 3.5 mW (typ.) Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) High-speed modulation capability
4.5±0.3
2.8 1.8 1.0
4.8±0.3 2.4 2.4
12.8...
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| Datasheet |
 LN55 Datasheet
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