| Description | MOSFET – Single N-Channel, SUPERFET) III, FRFET) 650 V, 30 A, 110 mW NVH4L110N65S3F Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source ... |
| Features |
• Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS Gate−to−Source Voltage − DC ... |
| Datasheet |
 NVH4L110N65S3F Datasheet - 740.31KB |
