| Part Number | NTH4L080N120SC1 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Title | SiC MOSFET |
| Description | Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silic... |
| Features |
• 1200 V @ TJ = 175°C • Max RDS(on) = 110 mW at VGS = 20 V, ID = 20 A • High Speed Switching with Low Capacitance • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection)... |
| Datasheet |
 NTH4L080N120SC1 Datasheet
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