Part Number | NTH4L015N065SC1 |
Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
Title | SiC MOSFET |
Description | DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – EliteSiC, 12 mohm, 650 V, M2, TO-247-4L NTH4L015N065SC1 Features • Typ. RDS(on) = 12 m... |
Features |
• Typ. RDS(on) = 12 mW @ VGS = 18 V Typ. RDS(on) = 15 mW @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 283 nC) • High Speed Switching with Low Capacitance (Coss = 430 pF) • 100% Avalanche Tested • TJ = 175°C • This Device is Halide Free and RoHS Co... |
Datasheet | NTH4L015N065SC1 Datasheet |