| Part Number | MTY16N80E |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Title | Power Field Effect Transistor |
| Description | MTY16N80E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This high voltage MOSFET uses ... |
| Features |
C = 25°C unless otherwise noted) Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MΩ)
Gate−to−Source Voltage — Continuous — Non−Repetitive (tp ≤ 10 ms)
VDSS VDGR VGS VGSM
800 Vdc 800 Vdc ± 20 Vdc ± 40 Vpk
Drain...
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| Datasheet |
 MTY16N80E Datasheet
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