| Part Number | IRF830 |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Title | Power Field Effect Transistor |
| Description | IRF830 Power Field Effect Transistor N−Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed po... |
| Features |
dc
Watts W/°C
°C
RθJC RθJA
TL
°C/W 1.67 62.5
300 °C
http://onsemi.com
TMOS POWER FET 4.5 AMPERES, 500 VOLTS
RDS(on) = 1.5 Ω
N−Channel D
®G
S
4
12 3
TO−220AB CASE 221A
STYLE 5
PIN ASSIGNMENT 1 Gate 2 Drain 3 Source 4 Drain
See the MTM4N45 Data...
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| Datasheet |
 IRF830 Datasheet
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