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MGY25N120

ON
Part Number MGY25N120
Manufacturer ON
Title Insulated Gate Bipolar Transistor
Description MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mod...
Features r Voltage — Continuous Collector Current — Continuous @ TC = 25°C — Continuous @ TC = 90°C — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Short Circuit Withstand ...

Datasheet PDF File MGY25N120 Datasheet

MGY25N120   MGY25N120   MGY25N120  




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