| Part Number | MGW12N120 |
| Manufacturer | ON |
| Title | Insulated Gate Bipolar Transistor |
| Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGW12N120/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mod... |
| Features |
llector –Gate Voltage (RGE = 1.0 MΩ) Gate –Emitter Voltage — Continuous Collector Current — Continuous @ TC = 25°C Collector Current — Continuous @ TC = 90°C Collector Current — Repetitive Pulsed Current (1) Total Power Dissipation @ TC = 25°C Derate a... |
| Datasheet |
 MGW12N120 Datasheet
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