Part Number | PHP1N50E |
Manufacturer | NXP (https://www.nxp.com/) |
Title | PowerMOS transistor |
Description | N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage... |
Features |
e peak value) Source-drain diode current (DC) Source-drain diode current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C Tmb = 25 ˚C Tmb = 25 ...
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Datasheet | PHP1N50E Datasheet |