| Part Number | PHD12N10E |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | Transistor |
| Description | N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mounting. The device is intended for use in Sw... |
| Features |
dissipation Storage temperature Junction Temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 30 14 10 56 75 175 175 UNIT V V V A A A W ˚C ˚C
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETE...
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| Datasheet |
 PHD12N10E Datasheet
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