| Description | N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHB42N03LT is supplied in the SOT404 surface mounting package. PINNING PIN 1 2 3 tab gate drain (no connection possible) source drain DESCRIPT... |
| Features |
• ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance • Surface mounting package PHB42N03LT SYMBOL d QUICK REFERENCE DATA VDSS = 30 V ID = 42 A g RDS(ON) ≤ 26 mΩ (VGS = 5 V) RDS(ON) ≤ 23 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel... |
| Datasheet |
 PHB42N03LT Datasheet - 61.54KB |
